PART |
Description |
Maker |
E28F004BL-T150 E28F004BL-B150 E28F400BL-T150 PA28F |
4-MBlT (256K x 16/ 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% Series 320 tactile switch with multiple color and cap options FireWire Current Limiter and Low-Drop ORing Switch Controller 4 MBlT56K × 16。为512k × 8)低功耗启动块闪存系列 4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4 MBlT56K × 16。为512k × 8)低功耗启动块闪存系列 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO40 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO56
|
Intel Corporation Intel Corp. Rochester Electronics, LLC Intel, Corp. Sharp, Corp.
|
28F004BL-T 28F400BL-B 28F400BL-T 28F400BL-TB E28F4 |
4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4-MBlT (256K x 16 / 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4-MBlT (256K x 16/ 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
|
Intel
|
PA28F400BL-B150 PA28F400BL-T150 28F400BL-TB E28F00 |
4-MBlT (256K x 16 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
|
INTEL[Intel Corporation]
|
GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs 8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛? 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100 512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100 8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位(256K x 36位)ByteSafe同步静态RAM(带2位脉冲地址计数器)) 8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位(512K x 18位)ByteSafe同步静态RAM(带2位脉冲地址计数器))
|
GSI Technology, Inc.
|
CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
AT27C400 AT27C400-12 AT27C400-12PC AT27C400-12PI A |
8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -40 to 85 256K X 16 OTPROM, 70 ns, PDIP40 4-Megabit 256K x 16 or 512K x 8 OTP EPROM 256K X 16 OTPROM, 120 ns, PDSO48 8-Channel Analog Multiplexer/Demultiplexer 16-PDIP -40 to 85 256K X 16 OTPROM, 90 ns, PDSO44 4-Megabit 256K x 16 or 512K x 8 OTP EPROM 256K X 16 OTPROM, 90 ns, PDSO44 8-Channel Analog Multiplexer/Demultiplexer 16-PDIP -40 to 85 256K X 16 OTPROM, 90 ns, PDSO48 8-Channel Analog Multiplexer/Demultiplexer 16-TVSOP -40 to 85 AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
CY14B104L-BV45XIT CY14B104N-BV45XCT CY14B104N-BV45 |
4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44 4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GVT71512ZC18-5I GVT71512ZC18-6I CY7C1356A-133ACI C |
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PBGA119 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PBGA119 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.2 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PBGA119 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GS881E18BT-300 GS881E32BGT-200I GS881E32BGD-333I G |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 6.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 4.5 ns, PBGA165 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
CY14B104L-BA15XCT CY14B104L-BA15XI |
4 Mbit (512K x 8/256K x 16) nvSRAM 512K X 8 NON-VOLATILE SRAM, 15 ns, PBGA48
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CY14B104MA-ZSP25XI CY14B104KA-ZS25XCT CY14B104KA C |
4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock 512K X 8 NON-VOLATILE SRAM, 20 ns, PDSO44
|
CYPRESS SEMICONDUCTOR CORP
|
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